2SA1160_07 TOSHIBA [Toshiba Semiconductor], 2SA1160_07 Datasheet
2SA1160_07
Related parts for 2SA1160_07
2SA1160_07 Summary of contents
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent 140 to 600 (V = − ( ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h Classification A: 140 to 280, B: ...
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I – −4 Common emitter −50 − 25°C −20 −3 −100 −10 −2 −5 −3 −1 − −0.8 −1.6 −2.4 −3.2 0 Collector-emitter voltage – 3000 Common ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...