2SK3700_09 TOSHIBA [Toshiba Semiconductor], 2SK3700_09 Datasheet
2SK3700_09
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2SK3700_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) Switching Regulator Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model ...
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Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time ...
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I – Common source 25°C 10 Pulse Test 4 Drain-source voltage V DS (V) I – V ...
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R – (ON) 10 COMMON SOURCE PULSE TEST 1 −80 − CASE TEMPERATURE Tc (°C) CAPACITANCE – 10000 1000 ...
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Duty=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.001 10μ 100μ SAFE OPERATING AREA 100 I D max (PULSED) * 100 μ max (CONTINUOUS OPERATION 1 Tc ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...