2SK3900-ZP NEC [NEC], 2SK3900-ZP Datasheet

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2SK3900-ZP

Manufacturer Part Number
2SK3900-ZP
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC [NEC]
Datasheet
Document No. D17175EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Super low on-state resistance
• Low C
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
designed for high current switching applications.
R
R
The 2SK3900 is N-channel MOS Field Effect Transistor
DS(on)1
DS(on)2
2. Starting T
3. R
iss
= 8.0 mΩ MAX. (V
= 10 mΩ MAX. (V
: C
G
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 25 Ω, T
= 3500 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
ch(peak)
= 25°C)
Note2
DS
C
A
GS
GS
GS
= 25°C)
= 25°C)
= 0 V)
Note3
≤ 150°C
= 0 V)
Note3
= 4.5 V, I
= 10 V, I
DD
= 30 V, R
N-CHANNEL POWER MOS FET
D
D
= 41 A)
= 41 A)
I
A
I
D(pulse)
V
V
G
D(DC)
P
P
T
E
E
T
I
= 25°C)
GSS
DSS
AR
stg
AS
AR
= 25 Ω, V
T1
T2
ch
DATA SHEET
SWITCHING
−55 to +150
GS
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V, L = 100
±246
37.5
104
150
141
141
±20
±82
1.5
60
ORDERING INFORMATION
PART NUMBER
2SK3900-ZP
mJ
mJ
°C
°C
W
W
V
V
A
A
A
µ
H
2SK3900
(TO-263)
TO-263 (MP-25ZP)
PACKAGE
2004

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2SK3900-ZP Summary of contents

Page 1

... Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17175EJ1V0DS00 (1st edition) Date Published May 2004 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION PART NUMBER 2SK3900- 25° DSS V ± ...

Page 2

... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µ ≤ Duty Cycle 1% ch Data Sheet D17175EJ1V0DS 2SK3900 MIN. TYP. MAX. UNIT µ ±10 µ A 1.5 2.0 2 6.3 8.0 mΩ 7.4 10 mΩ 3500 pF 660 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 125 100 150 175 100 µ 100 R = 83.3°C/W th(ch- 1.2°C/W th(ch- 100 Pulse Width - s Data Sheet D17175EJ1V0DS 2SK3900 50 75 100 125 150 175 T - Case Temperature - °C C 100 1000 3 ...

Page 4

... 0.1 125 175 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 0 V Data Sheet D17175EJ1V0DS 2SK3900 25°C 75°C 150° Pulsed Gate to Source Voltage - V GS 25°C 75°C 150° ...

Page 5

... 100 Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 1 1.5 0 Diode Forward Current - A F Data Sheet D17175EJ1V0DS 2SK3900 C iss C oss C rss 1 10 100 ...

Page 6

... L - Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 141 Starting T ch Data Sheet D17175EJ1V0DS 2SK3900 Ω → ≤ 37 100 125 150 - Starting Channel Temperature - °C ...

Page 7

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 1.3±0.2 0.25 Data Sheet D17175EJ1V0DS 2SK3900 7 ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3900 Not all M8E 02. 11-1 ...

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