2SK3900-ZP NEC [NEC], 2SK3900-ZP Datasheet - Page 2

• Manufacturer Part Number: 2SK3900-ZP
• Description: SWITCHING N-CHANNEL POWER MOSFET
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
D.U.T.
Ω
G
I
D
= 25
50
I
AS
D.U.T.
Ω
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
L
DD
V
DS
L
V
DD
ch
SYMBOL
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
C
Q
Q
I
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
GD
A
fs
iss
rss
GS
rr
r
f
G
rr
|
= 25°C)
Data Sheet D17175EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
D
F
F
GS
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 82 A, V
= 82 A, V
τ = 1 s
Duty Cycle
= 82 A
= 0 Ω
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±20 V, V
= 10 V, I
= 4.5 V, I
= 0 V
= 30 V, I
= 10 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
= 48 V
PG.
µ
TEST CONDITIONS
τ
GS
GS
D
D
D
D
≤
D
µ
GS
= 1 mA
= 41 A
= 41 A
= 41 A
= 0 V
= 0 V
1%
DS
s
= 41 A
= 0 V
R
= 0 V
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
28.1
1.5
V
V
V
GS
DS
0
0
DS
10%
TYP.
3500
65.5
11.5
16.5
0.95
t
660
240
d(on)
2.0
6.3
7.4
5.5
90%
56
18
11
62
41
61
t
on
10% 10%
t
r
MAX.
±10
V
2.5
8.0
1.5
10
10
GS
t
d(off)
2SK3900
t
off
90%
90%
UNIT
t
f
mΩ
mΩ
µ
µ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A