2SK3903_09 TOSHIBA [Toshiba Semiconductor], 2SK3903_09 Datasheet

2SK3903_09

Manufacturer Part Number

2SK3903_09

Description

Switching Regulator Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3903_09.pdf (6 pages)

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Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y

Low leakage current: I

Enhancement model: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: V

Note 3: Repetitive rating: pulse width limited by max junction temperature

This transistor is an electrostatic-sensitive device. Handle with care.

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

Characteristic

= 90 V, T

Pulse

DSS

= 20 kΩ)

= 2.0 to 4.0 V (V

= 25°C, L = 7.2 mH, R

(Note 2)

= 100 μA (max) (V

(Note 1)

DS (ON)

(Ta = 25°C)

⎪ = 7.5 S (typ.)

Symbol

DGR

GSS

DSS

stg

2SK3903

Symbol

th (ch-a)

th (ch-c)

= 0.32 Ω (typ.)

= 10 V, I

= 600 V)

= 25 Ω, I

−55 to 150

Rating

600

±30

150

806

150

= 1 mA)

0.833

Max

= 14 A

Unit

°C/W

°C

Unit

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEATSINK)

3. SOURCE

2−16C1B

SC-65

2009-09-29

―

2SK3903

Unit: mm

Related parts for 2SK3903_09

2SK3903_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: ⎪Y • Low leakage current 100 μA (max) (V DSS • Enhancement model ...

Page 2

Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time ...

Page 3

I – COMMON SOURCE 10 8 25°C PULSE TEST 4 DRAIN−SOURCE VOLTAGE – COMMON ...

Page 4

(ON) 1.2 COMMON SOURCE PULSE TEST 1 0.8 0 3.5 0.4 0.2 0 -80 - 120 CASE TEMPERATURE Tc (°C) CAPACITANCE – V ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.001 10 μ 100 μ SAFE OPERATING AREA 100 I D max (PULSE max (CONTINUOUS OPERATION Tc ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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