2SA2097_06 TOSHIBA [Toshiba Semiconductor], 2SA2097_06 Datasheet

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2SA2097_06

Manufacturer Part Number
2SA2097_06
Description
High-Speed Swtching Applications DC-DC Converter Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA2097_06.pdf (5 pages)
High-Speed Swtching Applications
DC-DC Converter Applications
•
•
•
Absolute Maximum Ratings
High DC current gain: h
Low collector-emitter saturation: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
f
Ta = 25°C
Tc = 25°C
FE
= 55 ns (typ.)
Pulse
TOSHIBA Transistor Silicon PNP Epitaxial Type
DC
= 200 to 500 (I
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
2SA2097
j
C
= −0.27 V (max)
= −0.5 A)
−55 to 150
Rating
−0.5
−50
−50
−10
150
−7
−5
20
1
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
2006-11-09
―
―
2SA2097
Unit: mm

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2SA2097_06 Summary of contents

Page 1

TOSHIBA Transistor Silicon PNP Epitaxial Type High-Speed Swtching Applications DC-DC Converter Applications • High DC current gain 200 to 500 (I FE • Low collector-emitter saturation: V • High-speed switching (typ.) f Absolute Maximum ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time μs Duty cycle < 1% Figure 1 Switching ...

Page 3

I – −6 Common emitter Tc = 25°C −60 mA −50 mA −70 mA −40 mA −30 mA −4 −20 mA −10 mA −2 −5 mA − − −2 −4 ...

Page 4

Safe Operation Area −100 −50 −30 100 μ max (pulsed) * −10 − max (continuous) 1 ms* −3 Direct movement −1 (Tc = 25°C) −0.5 −0.3 ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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