2SC3075_06 TOSHIBA [Toshiba Semiconductor], 2SC3075_06 Datasheet

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2SC3075_06

Manufacturer Part Number
2SC3075_06
Description
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC3075_06.pdf (5 pages)
Switching Regulator and High Voltage Switching
Applications
DC-DC Converter Applications
DC-AC Converter Applications
•
•
Absolute Maximum Ratings
Excellent switching times: t
High collector breakdown voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
DC
Pulse
Ta = 25°C
Tc = 25°C
t
r
f
= 1.5 μs (max), (I
= 1.0 μs (max)
(Ta = 25°C)
CEO
Symbol
V
V
V
T
I
CBO
CEO
EBO
P
I
CP
I
T
stg
C
B
C
2SC3075
j
= 400 V
C
= 0.5 A)
−55 to 150
Rating
500
400
150
0.8
1.5
0.5
1.0
10
7
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1A
2-7J1A
2006-11-09
2SC3075
―
―
―
―
Unit: mm

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2SC3075_06 Summary of contents

Page 1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times 1.0 μs (max 1.5 μs (max • ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise on time Switching time Storage time Fall time Marking C3075 Part No. (or abbreviation code) ...

Page 3

I – 1000 Common emitter Tc = 25°C 80 800 600 20 10 400 5 200 Collector-emitter voltage – ...

Page 4

I – Common emitter −1 10 − 100°C 25 −40 − 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage V (V) BE Switching Characteristics 100 I C ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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