2SC2240_07 TOSHIBA [Toshiba Semiconductor], 2SC2240_07 Datasheet
2SC2240_07
Manufacturer Part Number
2SC2240_07
Description
Silicon NPN Epitaxial Type (PCT process)
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC2240_07.pdf
(5 pages)
Low Noise Audio Amplifier Applications
applications. This device is designed to lower noise figure in the region of
low signal source impedance, and to lower the pulse noise. This is
recommended for the first stages of Equalizer amplifiers.
•
•
•
•
Absolute Maximum Ratings
The 2SC2240 is a transistor for low frequency and low noise
Low noise : NF = 4dB (typ.) R
Low pulse noise: Low 1/f noise
High DC current gain: h
High breakdown voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
: NF = 0.5dB (typ.) R
Characteristics
f = 1 kHz
f = 1 kHz
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
FE
CEO
= 200~700
G
G
= 100 Ω, V
= 120 V
= 1 kΩ, V
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SC2240
j
CE
CE
= 6 V, I
= 6 V, I
−55~125
Rating
C
120
120
100
300
125
C
20
5
1
= 100 μA,
= 100 μA,
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
2-5F1B
TO-92
SC-43
2007-11-01
2SC2240
Unit: mm
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2SC2240_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Noise figure Note: h classification GR: 200~400, BL: 350~700 FE (Ta = 25°C) Symbol Test ...
Page 3
3 2SC2240 2007-11-01 ...
Page 4
4 2SC2240 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...