SUD15N06 VISHAY [Vishay Siliconix], SUD15N06 Datasheet

no-image

SUD15N06

Manufacturer Part Number
SUD15N06
Description
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD15N06-90
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUD15N06-90L
Manufacturer:
ST
0
Part Number:
SUD15N06-90L-T4
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SUD15N06-90LT4
Manufacturer:
VISHAY
Quantity:
30 000
Notes:
a.
Document Number: 71087
S-49634—Rev. D, 20-Sep-99
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Free Air, FR4 Board Mount
Junction-to-Case
1.36 x 2.1 surface mounted on 1” x 1” FR4 Board.
V
DS
60
60
(V)
N-Channel 60-V (D-S), 175 C MOSFET, Logic Level
0.090 @ V
0.065 @ V
J
J
r
DS(on)
= 175 C)
= 175 C)
SUD15N06-90L
Order Number:
Parameter
Parameter
G
Top View
TO-252
GS
GS
( )
D
= 4.5 V
= 10 V
S
1%)
a
Drain Connected to Tab
I
D
15
14
(A)
T
L = 0.1 mH
T
T
T
C
C
C
A
= 100 C
= 25 C
= 25 C
= 25 C
Symbol
Symbol
T
R
R
J
V
E
I
I
P
P
DM
, T
I
I
I
AR
thJA
thJC
GS
AR
D
D
S
D
D
stg
G
N-Channel MOSFET
Typical
D
S
3.7
60
–55 to 175
www.vishay.com FaxBack 408-970-5600
Limit
15
12
30
15
15
11
37
2
20
a
SUD15N06-90L
Vishay Siliconix
Maximum
4.0
70
Unit
Unit
C/W
C/W
mJ
W
W
V
A
A
A
C
2-1

Related parts for SUD15N06

SUD15N06 Summary of contents

Page 1

... 100 0 stg Symbol R thJA R thJC SUD15N06-90L Vishay Siliconix D S Limit Unit –55 to 175 C Typical Maximum Unit 60 70 C/W C/W 3.7 4.0 www.vishay.com FaxBack 408-970-5600 ...

Page 2

... SUD15N06-90L Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State Drain Current Drain Source On State Resistance Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... T = – 0.06 125 C 0.04 0. iss SUD15N06-90L Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) ...

Page 4

... SUD15N06-90L Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Drain Current vs. Case Temperature 100 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 ...

Related keywords