SUD15N06 VISHAY [Vishay Siliconix], SUD15N06 Datasheet - Page 2

• Manufacturer Part Number: SUD15N06
• Description: N-Channel 60-V (D-S), 175C MOSFET, Logic Level
• Manufacturer: VISHAY [Vishay Siliconix]

SUD15N06-90L
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
For design aid only; not subject to production testing.
Pulse test; pulse width
Independent of operating temperature.
G
c
c
V l
O S
Parameter
c
D i C
c
c
c
c
b
R
i
b
300 s, duty cycle
b
b
b
Symbol
V
V
r
r
(BR)DSS
I
DS(
DS(on)
t
t
I
I
I
C
2%.
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
I
GSS
DSS
g
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
)
I
I
D
V
V
C
V
V
V
V
V
V
DS
DS
GS
GS
DS
GS
= 25 C)
= 60 V, V
= 60 V, V
I
= 30 V, V
V
= 10 V, I
= 10 V, I
F
V
= 0 V, V
15 A V
15 A, V
V
V
V
V
DS
V
V
V
DS
V
30 V V
= 15 A, di/dt = 100 A/ s
Test Condition
GS
I
0 V V
DS
DS
GS
F
DS
GS
DD
DD
= 15 A, V
= 0 V, V
= V
= 0 V, I
= 60 V, V
= 5 V, V
= 10 V, I
= 15 V, I
= 30 V, R
= 4.5 V, I
GEN
D
D
GS
DS
30 V R
GS
GS
GS
= 10 A, T
= 10 A, T
, I
= 25 V, f = 1 MHz
= 0 V, T
= 0 V, T
D
= 10 V, R
GS
D
= 10 V, I
,
25 V f
GS
GS
= 250
10 V R
D
= 250
10 V I
GS
D
D
=
L
L
= 10 A
= 10 A
= 10 V
= 0 V
= 5 A
= 2
= 0 V
J
J
2
J
J
20 V
= 125 C
= 175 C
D
= 125 C
= 175 C
G
A
1 MH
A
= 15 A
= 2.5
15 A
2 5
Min
1.0
60
15
Typ
0.050
0.065
524
2.0
3.5
0.9
11
98
28
12
15
29
2
7
8
7
S-49634—Rev. D, 20-Sep-99
a
Document Number: 71087
Max
0.065
0.090
0.12
0.15
150
3.0
1.2
50
20
20
25
40
20
30
60
100
1
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
V
C
A
A
F