SI6913DQ-T1 VISHAY [Vishay Siliconix], SI6913DQ-T1 Datasheet
SI6913DQ-T1
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SI6913DQ-T1 Summary of contents
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... Top View Ordering Information: Si6913DQ-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
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... Si6913DQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... Source-to-Drain Voltage (V) SD Document Number: 72368 S-31914—Rev. A, 15-Sep-03 New Product 3500 3000 2500 2000 1500 = 2.5 V 1000 = 4 25_C J 1.2 1.5 Si6913DQ Vishay Siliconix Capacitance C iss C oss C 500 rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1. 4 ...
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... Si6913DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 0 400 mA D 0.1 0.0 -0.1 -0.2 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area, Junction-to-Case ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72368 S-31914—Rev. A, 15-Sep-03 New Product - Square Wave Pulse Duration (sec) Si6913DQ Vishay Siliconix 1 10 www.vishay.com 5 ...