SI6913DQ-T1 VISHAY [Vishay Siliconix], SI6913DQ-T1 Datasheet - Page 2

• Manufacturer Part Number: SI6913DQ-T1
• Description: Dual P-Channel 12-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Notes
a.
b.
www.vishay.com
2
Si6913DQ
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
V
1
V
GS
a
DS
a
Output Characteristics
= 5 thru 2.5 V
- Drain-to-Source Voltage (V)
a
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
2 V
3
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
I
D(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
R
1.5 V
t
SD
t
t
rr
gs
gd
fs
r
f
g
g
4
5
New Product
V
I
DS
V
D
DS
^ -1 A, V
= -6 V, V
I
F
V
= -12 V, V
V
V
V
V
V
V
V
DS
= -1.0 A, di/dt = 100 A/ms
DS
GS
GS
GS
I
DS
V
V
S
DS
Test Condition
DS
DD
DD
= -1.0 A, V
= 0 V, V
= -5 V, V
= -2.5 V, I
= -1.8 V, I
= V
= -4.5 V, I
= -12 V, V
= -5 V, I
= -6 V, R
= -6 V, R
f = 1.0 MHz
GEN
GS
GS
GS
, I
= -4.5 V, I
= -4.5 V, R
GS
D
= 0 V, T
GS
D
= -400 mA
D
D
D
GS
= "8 V
GS
= -5.8 A
L
L
= -5.8 A
= -5.0 A
= -4.4 A
= -4.5 V
= 6 W
= 6 W
= 0 V
= 0 V
J
D
30
24
18
12
= 70_C
G
= -5.8 A
6
0
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
-0.40
-20
1.0
T
C
0.016
0.021
0.029
Typ
-0.61
18.5
130
2.7
5.0
4.6
= -55_C
25_C
25
45
80
80
65
S-31914—Rev. A, 15-Sep-03
1.5
Document Number: 72368
"100
Max
0.021
0.028
0.037
-0.9
-1.1
120
200
120
100
-25
28
70
-1
2.0
125_C
Unit
nA
mA
mA
nC
ns
W
W
V
A
S
V
2.5