SI6925ADQ_08 VISHAY [Vishay Siliconix], SI6925ADQ_08 Datasheet - Page 3

• Manufacturer Part Number: SI6925ADQ_08
• Description: Dual N-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72623
S-81056-Rev. B, 12-May-08
0.10
0.08
0.06
0.04
0.02
0.00
30
10
1
6
5
4
3
2
1
0
0.0
0
0
V
GS
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.9 A
= 2.5 V
0.2
On-Resistance vs. Drain Current
= 6 V
5
1
V
SD
Q
- Source-to-Drain Voltage (V)
g
0.4
I
10
D
- Total Gate Charge (nC)
- Drain Current (A)
V
Gate Charge
GS
2
T
J
= 3.0 V
= 150 °C
0.6
15
3
0.8
20
V
T
GS
J
4
= 25 °C
1.0
25
= 4.5 V
1.2
30
5
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
= 3.9 A
rss
= 4.5 V
4
1
T
V
0
V
J
GS
DS
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
oss
25
Capacitance
8
2
50
C
Vishay Siliconix
iss
Si6925ADQ
I
D
12
3
75
= 3.9 A
100
www.vishay.com
16
4
125
150
20
5
3