SI6925ADQ_08 VISHAY [Vishay Siliconix], SI6925ADQ_08 Datasheet - Page 4

• Manufacturer Part Number: SI6925ADQ_08
• Description: Dual N-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si6925ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
I
D
-3
= 250 µA
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
0.1
100
10
by R
-2
* V
Limited
Safe Operating Area, Junction-to-Case
125
Limited
GS
DS(on)
I
D(on)
> minimum V
V
*
DS
150
Square Wave Pulse Duration (s)
Single Pulse
T
- Drain-to-Source Voltage (V)
A
1
= 25 °C
10
BV
-1
GS
DSS
at which R
Limited
10
DS(on)
100
80
60
40
20
I
DM
0
1
10
is specified
Limited
-3
1 ms
10 ms
100 ms
1 s
10 s
DC
100
10
-2
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
A
1
S-81056-Rev. B, 12-May-08
10
= P
t
Document Number: 72623
2
-1
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 125 °C/W
1
600
10