2SK2399_10 TOSHIBA [Toshiba Semiconductor], 2SK2399_10 Datasheet
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2SK2399_10
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2SK2399_10 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement ...
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Electrical Characteristics Characteristics Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...
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3 2SK2399 2010-02-05 ...
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4 2SK2399 2010-02-05 ...
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Ω 11 2SK2399 1 ⎛ B ⎞ VDSS = ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...