2SK2719_06 TOSHIBA [Toshiba Semiconductor], 2SK2719_06 Datasheet
2SK2719_06
Related parts for 2SK2719_06
2SK2719_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V ...
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Electrical Characteristics Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...
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I – Common source 25°C 10 Pulse test Drain-source voltage V ( – ...
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R – (ON) 20 Common source Pulse test 1 −80 − Case temperature Tc (°C) Capacitance – 2000 ...
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Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.05 Single pulse 0.03 0.01 0.01 0.005 0.003 10 μ 100 μ Safe Operating Area max (pulsed max (continuous ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...