HN58S65AT-15 HITACHI [Hitachi Semiconductor], HN58S65AT-15 Datasheet
HN58S65AT-15
Related parts for HN58S65AT-15
HN58S65AT-15 Summary of contents
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HN58S65A Series 64 k EEPROM (8-kword 8-bit) Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and ...
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... HN58S65A Series Ordering Information Type No. Access time HN58S65AT-15 150 ns Pin Arrangement I/O0 19 I/ I/O3 23 I/O4 24 I/O5 25 I/ A10 Pin Description Pin name Function A0 to A12 Address input I/O0 to I/O7 Data input/output OE Output enable CE Chip enable WE Write enable V Power supply ...
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Block Diagram V CC High voltage generator Control logic and timing Address buffer and latch A6 to A12 Operation Table CE Operation Read V Standby V Write V Deselect V Write Inhibit ...
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HN58S65A Series Absolute Maximum Ratings Parameter Power supply voltage relative to V Input voltage relative Operating temperature range * Storage temperature range Notes: 1. Vin min : –3.0 V for pulse width 2. Including electrical characteristics ...
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Capacitance (Ta = 25˚ MHz) Parameter Symbol Input capacitance Cin* Output capacitance Cout* Note: 1. This parameter is sampled and not 100% tested. AC Characteristics ( 70˚C, V Test Conditions Input pulse levels ...
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HN58S65A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time ...
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Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out t ACC Data out valid HN58S65A Series ...
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HN58S65A Series Byte Write Timing Waveform(1) (WE Controlled) Address Din RDY/Busy OES t DS High OEH ...
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Byte Write Timing Waveform(2) (CE Controlled) Address Din High-Z RDY/Busy OES t DS HN58S65A Series OEH ...
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HN58S65A Series Page Write Timing Waveform(1) (WE Controlled) *5 Address A0 to A12 OES Din High-Z RDY/Busy BLC ...
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Page Write Timing Waveform(2) (CE Controlled) *6 Address A0 to A12 OES Din High-Z RDY/Busy Data Polling Timing Waveform Address OEH OE ...
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HN58S65A Series Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When ...
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Software Data Protection Timing Waveform(1) (in protection mode Address 1555 Data AA Software Data Protection Timing Waveform(2) (in non-protection mode Address 1555 0AAA Data BLC 1555 Write address 0AAA ...
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HN58S65A Series Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional bytes can ...
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Data Protection 1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent ...
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HN58S65A Series (1) Protection by CE, OE realize the unprogrammable state, the input level of control pins must be held as shown in the table below Don’t care Pull-up to ...
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... Package Dimensions HN58S65AT Series (TFP-28DB) 8.00 8.20 Max 28 1 0.55 0.22 0.08 0.10 0.20 0.06 0.45 Max 0.10 Dimension including the plating thickness Base material dimension 13.40 0.30 Hitachi Code JEDEC Code EIAJ Code Weight (reference value) HN58S65A Series Unit: mm 0.80 0 – 5 0.50 0.10 TFP-28DB — — 0.23 g ...
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HN58S65A Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, ...