HM628512B Hitachi Semiconductor, HM628512B Datasheet - Page 5

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HM628512B

Manufacturer Part Number
HM628512B
Description
4 M SRAM (512-kword x 8-bit)
Manufacturer
Hitachi Semiconductor
Datasheet

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Function Table
WE
H
H
L
L
Note:
Absolute Maximum Ratings
Parameter
Power supply voltage
Voltage on any pin relative to V
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Notes: 1. –3.0 V for pulse half-width
Recommended DC Operating Conditions (Ta = –20 to +70 C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Note:
2. Maximum voltage is 7.0 V
1. –3.0 V for pulse half-width
: H or L
CS
H
L
L
L
L
OE
H
L
H
L
Symbol
V
V
V
V
SS
CC
SS
IH
IL
Mode
Not selected
Output disable
Read
Write
Write
30 ns
30 ns
Symbol
V
V
P
Topr
Tstg
Tbias
CC
T
T
Min
4.5
0
2.2
–0.3
*1
V
I
I
I
I
I
SB
CC
CC
CC
CC
CC
, I
current
SB1
Value
–0.5 to +7.0
–0.5*
1.0
–20 to +70
–55 to +125
–20 to +85
Typ
5.0
0
1
to V
Dout pin
High-Z
High-Z
Dout
Din
Din
CC
+ 0.3*
Max
5.5
0
V
0.8
HM628512B Series
2
CC
+ 0.3
Ref. cycle
Read cycle
Write cycle (1)
Write cycle (2)
Unit
V
V
W
C
C
C
Unit
V
V
V
V
5

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