2SK2685 Hitachi Semiconductor, 2SK2685 Datasheet

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2SK2685

Manufacturer Part Number
2SK2685
Description
GaAs HEMT
Manufacturer
Hitachi Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2685
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
2SK2685ZT-TR
Manufacturer:
HITACHI/日立
Quantity:
20 000
Application
UHF low noise amplifier
Features
Outline
Excellent low noise characteristics.
Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)
High associated gain.
Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)
High voltage.
V
Small package. (CMPAK-4)
DS
= 6 or more voltage.
CMPAK–4
3
2
2SK2685
GaAs HEMT
4
1
1. Source
2. Gate
3. Source
4. Drain
ADE-208-400
1st. Edition

Related parts for 2SK2685

2SK2685 Summary of contents

Page 1

... Excellent low noise characteristics. Fmin = 0.83 dB Typ mA, 2 GHz) High associated gain Typ mA, 2 GHz) High voltage more voltage. DS Small package. (CMPAK-4) Outline CMPAK–4 2SK2685 GaAs HEMT Source 4 2. Gate 3. Source 4. Drain ADE-208-400 1st. Edition ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage temperature Attention: This device is very sensitive to electro static discharge recommended to adopt appropriate cautions when handling this transistor. ...

Page 3

... Gate to Source Voltage 200 Drain to Source Voltage V 100 V Pulse Test –0.4 0 –2.0 (V) GS 2SK2685 Typical Output Characteristics –0.3 V –0.1 V Pulse Test V = –0 (V) DS Forward Transfer Admittance vs. Gate to Source Voltage = –1.6 –1.2 –0.8 –0.4 ...

Page 4

... Forward Transfer Admittance vs. Drain Current 100 Pulse Test Drain Current I Minimum Noise Figure vs. Drain Current GHz 900 MHz 0 10 Drain Current (mA ...

Page 5

... MHz Drain to Source Voltage (V) DS Isolation vs. Drain Current GHz 10 20 Drain Current I (mA) D 2SK2685 Isolation vs. Drain Current 900 MHz Drain Current I (mA ...

Page 6

... S11 Parameter vs. Frequency 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1.0 1.5 0 –0.2 –0.4 –0.6 –0.8 –1 Condition : mA 200 to 2000 MHz (200 MHz step S21 Parameter vs. Frequency 90 120 150 180 –150 –120 –90 Condition : mA 200 to 2000 MHz (200 MHz step) ...

Page 7

... S22 ANG. MAG. ANG. 89.8 0.688 –3.2 88.2 0.682 –6.5 83.3 0.674 –10.6 81.5 0.668 –13.8 79.3 0.658 –17.2 76.0 0.648 –20.7 74.8 0.636 –23.7 73.1 0.622 –27.1 72 ...

Page 8

Hitachi Code ...

Page 9

... No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. This product must not be placed in the mouth contains toxic substances that may cause poisoning. ...

Page 10

... Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor Hitachi Europe GmbH (America) Inc. Electronic components Group 179 East Tasman Drive, Dornacher Straße 3 San Jose,CA 95134 D-85622 Feldkirchen, Munich Tel: < ...

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