2SK3378 Hitachi Semiconductor, 2SK3378 Datasheet
2SK3378
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2SK3378 Summary of contents
Page 1
... Features Low on-resistance R =2.7 typ 4.7 typ gate drive device. Small package (CMPAK) Outline CMPAK G 2SK3378 Silicon N Channel MOS FET High Speed Switching = ADE-208-805 ( Source 2. Gate 3. Drain 1st.Edition. June 1999 ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value on the alumina ceramic board (12 0.7 mm) Electrical Characteristics ( ...
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... Maximum Safe Operation Area 5 2 1.0 0.5 0.2 0.1 0.05 0.02 Operation in this area 0.01 is limited by RDS(on) 0.005 0.002 0.001 Ta=25 °C 0.0005 150 200 0.05 0.1 0.2 Drain to Source Voltage Ta ( °C) Value on the alumina ceramic boad. (12.5x20x0.7mm) 2SK3378 10 µs 100 µ 1 ...
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... Package Dimensions + 0.10 0.3 – 0.05 + 0.1 0.3 – 0.05 0.3 0.65 0.65 + 0.2 1.3 – 0.2 + 0.2 2.0 – 0 0.1 + 0.1 – 0.0.5 + 0.10 – 0.06 CMPAK Hitachi Code SC–70 EIAJ JEDEC Unit: mm – ...
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... Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Hitachi Asia Ltd. Telex: 40815 HITEC HX Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 2SK3378 5 ...