2SK973 Hitachi Semiconductor, 2SK973 Datasheet
2SK973
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2SK973 Summary of contents
Page 1
... PW 10 µs, duty cycle ** Value ° 2SK973 S DPAK-1 1 Symbol V DSS V ...
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... L , 2SK973 S Table 2 Electrical Characteristics (Ta = 25°C) Item ——————————————————————————————————————————— ...
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... Drain to Source Voltage V 0.05 100 150 (°C) C Pulse Test 3 2 (V) DS 2SK973 L , 2SK973 S Maximum Safe Operation Area 1.0 0 25°C 0.1 0.1 0.3 1 100 Drain to Source Voltage V (V) DS Typical Transfer Characteristics 5 –25°C 75°C ...
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... L , 2SK973 S Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 1.2 0.8 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 0.6 0.4 0 –40 0 Case Temperature T Pulse Test ( 1.0 0 ...
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... Gate Charge Qg (nc) 1000 (A) DR 100 2SK973 L , 2SK973 S Typical Capacitance vs. Drain to Source Voltage MHz 300 Ciss Coss 100 30 Crss Drain to Source Voltage V (V) DS Switching Characteristics ...
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... L , 2SK973 S Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test 0.4 0.8 Source to Drain Voltage 1.0 0.5 0.3 0.1 0.03 0. – 1.2 2.0 1.6 (V) SD Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW ( 25°C C ch–c(t) = (t) · ...
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... Switching Time Test Circuit Vin Monitor 50 Vin = 10 V Vout Monitor D.U.T Vin R L Vout . (on) DD 2SK973 L , 2SK973 S Wavewforms (off ...