2SK3378 Hitachi Semiconductor, 2SK3378 Datasheet - Page 2

• Manufacturer Part Number: 2SK3378
• Description: Silicon N Channel MOS FET High Speed Switching
• Manufacturer: Hitachi Semiconductor

2SK3378
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note:
2
1. PW
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
3. Pulse test
4. Marking is EN
See characteristics curves of 2SK3288
10 s, duty cycle
Symbol
V
V
I
I
R
|y
Ciss
Coss
t
t
t
t
GSS
DSS
d(on)
r
d(off)
f
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DS(on)
fs
|
1%
Symbol
V
V
I
I
I
Pch
Tch
Tstg
D
D(pulse)
DR
DSS
GSS
Min
30
—
—
1.3
—
—
55
—
—
—
—
—
—
—
20
Note 2
Note1
Typ
—
—
—
—
—
2.7
4.7
85
1.6
7
0.5
100
330
1150
940
Max
—
—
1
2.3
3.5
7.0
—
—
—
—
—
—
—
—
Ratings
30
100
400
100
300
150
–55 to +150
5
20
Unit
V
V
V
mS
pF
pF
pF
ns
ns
ns
ns
A
A
Test Conditions
I
I
V
V
I
I
I
I
V
V
f = 1 MHz
I
R
D
D
D
D
G
D
D
GS
DS
DS
GS
L
= 50 mA,V
= 20 mA,V
= 50 mA, V
= 100 A, V
= 100 A, V
= 10 A, V
= 50 mA, V
= 200
= 16 V, V
= 30 V, V
= 10 V
= 0
Unit
V
V
mA
mA
mA
mW
C
C
GS
GS
DS
DS
GS
GS
= 10 V
= 4 V
GS
=10 V
DS
= 5 V
DS
= 0
= 10 V
= 0
= 0
= 0
Note 3
Note 3
Note 3