STD1NC70Z ST Microelectronics, STD1NC70Z Datasheet - Page 2
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STD1NC70Z
Manufacturer Part Number
STD1NC70Z
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet
1.STD1NC70Z.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD1NC70Z-1
Manufacturer:
ST
Quantity:
12 500
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ABSOLUTE MAXIMUM RATINGS
(
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
Note: 3. V
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/13
l
) Pulse width limited by safe operating area
V
Rthj-case
Rthj-amb
dv/dt (1)
Rthj-pcb
Symbol
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
I
DGR
I
I
TOT
GS
AR
T
T
ISO
stg
GSO
DS
GS
AS
D
D
10A, di/dt 200A/µs, V
T
j
l
(
l
)
BV
= T (25°-T) BV
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Voltage Thermal Coefficient
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max (for SMD) (#)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate-source Current (DC)
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
GSO
DD
= 25 °C, I
(25°)
V
(BR)DSS
Parameter
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
Parameter
= 0)
T
, V
JMAX.
C
C
DD
= 25°C
= 100°C
Igs=± 1mA (Open Drain)
T=25°C Note(3)
= 50 V)
Test Conditions
STP2NC70Z
1.4
0.9
5.6
0.4
50
-
TO-220
2.5
STP2NC70ZFP
-65 to 150
-65 to 150
62.5
300
Value
Min.
2000
± 25
1.4 (*)
0.9 (*)
5.6 (*)
± 50
700
700
25
2500
0.2
3
25
TO-220FP
Max Value
5
Typ.
1.4
1.3
60
STD1NC70Z-1
STD1NC70Z
0.36
DPAK
1.4
0.9
5.6
45
IPAK
2.75
100
275
-
100
Max.
10
W/°C
°C/W
°C/W
°C/W
Unit
Unit
Unit
V/ns
mJ
mA
-4
°C
°C
°C
A
W
V
V
V
V
A
A
A
V
V
/°C