M36LLR8760 ST Microelectronics, M36LLR8760 Datasheet - Page 15

• Manufacturer Part Number: M36LLR8760
• Description: 256 + 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
• Manufacturer: ST Microelectronics

Table 8. Flash 1 and Flash 2 DC Characteristics - Voltages
Table 9. PSRAM DC Characteristics
Note: 1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to
I
Symbo
I
I
I
Symbol
CC3R
CC3W
CC1
CC2
I
I
V
CC1P
V
SB
V
V
V
V
V
V
I
V
I
V
V
(1)
I
V
LO
V
PPLK
ZZ
OH
LI
OL
PPH
LKO
RPH
l
)
PP1
IH
IL
OH
OL
(2)
IH
IL
2. I
3. The Operating Temperature is +25°C.
(1)
(1)
(1)
(1
drive the output capacitance expected in the actual system.
ature compensated refresh threshold at +85°C). In order to achieve low standby current, all inputs must be driven either to V
or V
SB
Operating Current: Asynchronous Random
Read/Write
Operating Current: Asynchronous Page Read
Operating Current:
Initial Access, Burst Read/Write
Operating Current:
Continuous Burst Read
Operating Current:
Continuous Burst Write
V
Input Leakage Current
Output Leakage Current
Deep-Power Down Current
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
(Max) values are measured with RCR2 to RCR0 bits set to ‘000’ (full array refresh) and RCR6 to RCR5 bits set to ‘11’ (temper-
CC
SS
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Program or Erase Lockout
V
RP
V
PPF
DDF1/F2
.
PPF
Standby Current
F
pin Extended High Voltage
Program Voltage-Logic
Program Voltage Factory
Lock Voltage
Parameter
Parameter
M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
Test Condition
Program, Erase
Program, Erase
I
OH
I
OL
= –100µA
= 100µA
V
CC
I
OUT
V
G = V
E = V
Test Condition
CC
V
=V
0V
I
IN
I
OH
OL
= 0mA
IH
= V
E = V
= V
IH
= 0.2mA
IL
= 0.2mA
or V
V
CCQ
,
or E = V
IN
IH
IL
IH
or V
,
or 0V,
V
CC
V
V
IL
80MHz
66MHz
80MHz
66MHz
80MHz
66MHz
DDQF
DDQF
IH
70ns
70ns
Min
0.4
0.1
1.1
8.5
0
–
–
0.8V
Min.
1.4
0.2
Q
CC
Typ
1.8
9.0
Typ
10
V
DDQF
Max
0.4
0.4
0.1
3.3
9.5
0.4
3.3
1
0.2V
V
Max.
CCQ
120
0.2
0.4
25
15
35
30
18
15
35
30
+
1
1
CCQ
+
Unit
15/19
V
V
V
V
V
V
V
V
V
Uni
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
CCQ
V
V
V
V
t