K4T1G044QM Samsung, K4T1G044QM Datasheet - Page 14

• Manufacturer Part Number: K4T1G044QM
• Description: 1Gb M-die DDR2 SDRAM Specification
• Manufacturer: Samsung

1Gb M-die DDR2 SDRAM
OCD default characteristics
Notes:
1. Absolute Specifications (0°C ≤
2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-
280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and
voltage.
4. Slew rate measured from V
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as
measured from AC to AC. This is guaranteed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and
represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 400Mb/sec/pin and 533Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is
included in tDQSQ and tQHS specification.
size for OCD calibration
Output impedance step
Pull-up and pull-down
Output impedance
Output slew rate
mismatch
Description
Output
(V
OUT)
Parameter
IL
Sout
(AC) to V
T
CASE
V
TT
25 ohms
≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
IH
(AC).
Min
12.6
1.5
0
0
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Reference
Point
Nom
18
Max
23.4
1.5
4
5
Unit
ohms
ohms
ohms
V/ns
1,2
6
1,2,3
1,4,5,6,7,8
Rev.1.1 Jan. 2005
DDR2 SDRAM
Notes