K4T1G044QM Samsung, K4T1G044QM Datasheet - Page 27

• Manufacturer Part Number: K4T1G044QM
• Description: 1Gb M-die DDR2 SDRAM Specification
• Manufacturer: Samsung

1Gb M-die DDR2 SDRAM
culation is consistent.
These notes are referenced in the “Timing parameters by speed grade” tables for DDR2-400/533/667 and
DDR2-800.
29. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input sig-
nal crossing at the V
signal crossing at the V
device under test.
30. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input sig-
nal crossing at the V
differential data strobe crosspoint for a falling signal applied to the device under test.
tRPST
tHZ,tRPST
tHZ
end point
DQS
DQS
IH(ac)
IH(dc)
end point
T1
IL(ac)
T2
level to the differential data strobe crosspoint for a rising signal, and from the input
level to the differential data strobe crosspoint for a rising signal and V
level to the differential data strobe crosspoint for a falling signal applied to the
= 2*T1-T2
<Test method for tLZ, tHZ, tRPRE and tRPST>
tDS
VOH + x mV
VOH + 2x mV
VOL + 2x mV
VOL + x mV
Differential Input waveform timing
tDH
Page 27 of 29
tDS
VTT + 2x mV
VTT + x mV
VTT - x mV
VTT - 2x mV
tLZ,tRPRE
tDH
begin point
V
V
V
V
V
V
V
T1
DDQ
IH(ac)
IH(dc)
IL(dc)
IL(ac)
SS
REF(dc)
T2
max
max
min
min
Rev.1.1 Jan. 2005
DDR2 SDRAM
tRPRE
= 2*T1-T2
tLZ
begin point
IL(dc)
to the