K4T1G044QM Samsung, K4T1G044QM Datasheet - Page 5

• Manufacturer Part Number: K4T1G044QM
• Description: 1Gb M-die DDR2 SDRAM Specification
• Manufacturer: Samsung

1Gb M-die DDR2 SDRAM
x8 package pinout (Top View) : 68ball FBGA Package
Ball Locations (x8)
W
M
A
B
C
D
G
H
K
N
R
U
E
F
L
P
T
V
J
VDDQ
VDDL
VDD
DQ6
DQ4
VDD
BA2
VSS
NC
NC
1
Top View (See the balls through the Package)
+
+
+
+
+
+
+
+
+
1
A10/AP
VSSQ
VSSQ
RDQS
VREF
DQ1
CKE
BA0
A12
+
+
+
+
+
+
NU/
NC
NC
A3
A7
2
2
+
+
+ : Depopulated Ball
+
+
+
+
+
+
3
: Populated Ball
RDQS
VDDQ
DQ3
VSS
VSS
BA1
DM/
WE
NC
3
A1
A5
A9
+
+
+
+
+
+
+
+
+ + +
+ + +
+
+
+
+
+
+
+
+
+ + +
4
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5
W
M
A
B
D
E
G
H
K
N
R
U
V
C
F
J
L
P
T
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
6
VSSDL
VDDQ
VSSQ
DQS
DQ2
RAS
CAS
A11
+
+
+
NC
+
+
+
+
+
A2
A6
7
7
+
+
+
+
+
+
8
VSSQ
VSSQ
DQS
DQ0
A13
NC
CK
CK
CS
NC
A0
A4
A8
8
+
+
+
+
+
+
+
+
+
9
VDDQ
VDDQ
DQ7
DQ5
VDD
ODT
VDD
VSS
NC
NC
(60balls + 8balls of dummy balls)
9
Notes:
1.
2.
3.
4.
Pins F3 and E2 have
identical capacitance as
pins F7 and E8.
For a read, when enabled,
strobe pair RDQS &
RDQS are identical in
function and timing to
strobe pair DQS & DQS
and input masking
function is disabled.
The function of DM or
RDQS/RDQS are enabled
by EMRS command.
VDDL and VSSDL are
power and ground for the
DLL.
Rev.1.1 Jan. 2005
DDR2 SDRAM