WS57LV291C-70 STMicroelectronics, WS57LV291C-70 Datasheet - Page 3

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WS57LV291C-70

Manufacturer Part Number
WS57LV291C-70
Description
HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM
Manufacturer
STMicroelectronics
Datasheet
NOTES: 4. This parameter is only sampled and is not 100% tested.
TEST LOAD
NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
AC READ TIMING DIAGRAM
CAPACITANCE
SYMBOL
C
C
C
1.80 V
D.U.T.
IN
OUT
VPP
5. Typical values are for T A = 25°C and nominal supply voltages.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between V
Inadequate decoupling may result in access time degradation or other transient performance failures.
(High Impedance Test Systems)
ADDRESSES
98
(4)
Output Capacitance
OUTPUTS
Input Capacitance
V
T
PARAMETER
PP
A
= 25°C, f = 1 MHz
Capacitance
CS
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
CONDITIONS
V
V
V
OUT
PP
t
IN
ACC
VALID
= 0V
= 0 V
= 0V
A.C. TESTING INPUT/OUTPUT WAVEFORM
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a
logic "0." Timing measurements are made at 1.5 V for input and
output transitions in both directions.
t
3.0
0.0
CS
VALID
TYP
18
1.5
4
8
(5)
t
OH
t
DF
CC
POINTS
TEST
and ground is recommended.
MAX
12
25
6
1.5
WS57LV291C
UNITS
pF
pF
pF
2-17

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