HY27UF162G2B HYNIX [Hynix Semiconductor], HY27UF162G2B Datasheet - Page 20

• Manufacturer Part Number: HY27UF162G2B
• Description: 2Gb NAND FLASH
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev 0.2 / Jan. 2008
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 9: DC and Operating Characteristics
Symbol
(R/B)
I
I
I
I
I
V
V
V
I
V
I
I
CC1
CC2
CC3
CC4
CC5
LO
OL
OH
LI
OL
IH
IL
Table 10: AC Conditions
V
V
CE=V
OUT
Test Conditions
IN=
CE=Vcc-0.2,
I
WP=0V/Vcc
WP=0V/Vcc
=0 to Vcc (max)
I
OH
0 to Vcc (max)
V
t
OL
CE=V
RC
IL
OL
=-400uA
=2.1mA
, I
=25ns
=0.4V
-
-
-
-
OUT
IH
=0mA
,
2Gbit (256Mx8bit) NAND Flash
HY27UF(08/16)2G2B Series
0.8xVcc
Min
1 TTL GATE and CL=50pF
-0.3
2.4
8
-
-
-
-
-
-
-
-
0V to VCC
3.3Volt
3.3Volt
Value
VCC/2
5ns
Typ
15
15
15
10
10
-
-
-
-
-
-
Vcc+0.3
0.2xVcc
Max
± 10
± 10
0.4
30
30
30
50
1
-
-
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
20