HY27US161G1M HYNIX [Hynix Semiconductor], HY27US161G1M Datasheet - Page 17

• Manufacturer Part Number: HY27US161G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev 0.2 / May. 2007
Operating
Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Leve
Output Low Current (R/B)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0V - 3.6V)
Parameter
Sequential
Read
Program
Erase
Parameter
Table 8: DC and Operating Characteristics
Symbol
(R/B)
I
I
I
I
I
V
V
V
I
I
V
I
CC1
CC2
CC3
CC4
CC5
LO
OH
OL
LI
OL
IH
IL
Table 9: AC Conditions
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
V
V
OUT
Test Conditions
WP=PRE=0V/Vcc
WP=PRE=0V/Vcc
IN=
CE=Vcc-0.2,
I
=0 to Vcc (max)
I
I
0 to Vcc (max)
OH
V
t
OL
OUT
CE=V
CE=V
RC
OL
=-400uA
=2.1mA
=50ns
=0.4V
=0mA
-
-
-
-
IH
IL
,
,
HY27US(08/16)1G1M Series
0.8 x Vcc
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
0.4V to 2.4V
3.3Volt
Value
3.3Volt
1.5V
5ns
Typ
10
10
10
10
10
-
-
-
-
-
-
Vcc+0.3
0.2xVcc
Preliminary
± 10
± 10
Max
0.4
20
20
20
50
1
-
-
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
17