HY29LV160TT-70 Hynix Semiconductor, HY29LV160TT-70 Datasheet

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HY29LV160TT-70

Manufacturer Part Number

HY29LV160TT-70

Description

Manufacturer

Hynix Semiconductor

Datasheets

1.HY29LV160TT-90I.pdf (48 pages)

2.HY29LV160TT-90I.pdf (48 pages)

3.HY29LV160TT-70I.pdf (48 pages)

Specifications of HY29LV160TT-70

Case

TSOP48

Date_code

2006+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

HY29LV160TT-70

Manufacturer:

HY

Quantity:

1 980

Current page: 1 of 48
Download datasheet (517Kb)

KEY FEATURES

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Preliminary

Revision 1.2, May 2001

– Read, program and erase operations from

– Ideal for battery-powered applications

– 70, 80, 90 and 120 ns access time

Values At 5 Mhz)

– Automatic sleep mode current: 1 µA

– Standby mode current: 1 µA

– Read current: 9 mA

– Program/erase current: 20 mA

– One 16 KB, two 8 KB, one 32 KB and

– One 8 KW, two 4 KW, one 16 KW and

– Top or bottom boot block configurations

– Allows locking of a sector or sectors to

– Sectors lockable in-system or via

– Temporary Sector Unprotect allows

– Sector erase time: 0.25 sec typical for

– Chip erase time: 8 sec typical

– Byte program time: 9 µs typical

– Reduces programming time when issuing

and Erases Any Combination of Sectors

or the Entire Chip

– Suspends an erase operation to allow

– Erase Resume can then be invoked to

Verifies Data at Specified Addresses

Single Power Supply Operation

High Performance

Ultra-low Power Consumption (Typical

Flexible Sector Architecture:

Sector Protection

Fast Program and Erase Times

Unlock Bypass Program Command

Automatic Erase Algorithm Preprograms

Erase Suspend/Erase Resume

Automatic Program Algorithm Writes and

2.7 to 3.6 volts

versions

thirty-one 64 KB sectors in byte mode

thirty-one 32 KW sectors in word mode

available

prevent program or erase operations

within that sector

programming equipment

changes in locked sectors (requires high

voltage on RESET# pin)

each sector

multiple program command sequences

reading data from, or programming data

to, a sector that is not being erased

complete suspended erasure

16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

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LOGIC DIAGRAM

– Provide software confirmation of

– Provides hardware confirmation of

Device to Reading Array Data

Interface (CFI) Specification

– Flash device parameters stored directly

– Allows software driver to identify and use

– Pinout and software compatible with

– Superior inadvertent write protection

– 48-pin TSOP and 48-ball FBGA packages

100,000 Write Cycles per Sector Minimum

Data# Polling and Toggle Bits

Ready/Busy# Pin

Hardware Reset Pin (RESET#) Resets the

Compliant With Common Flash Memory

Compatible With JEDEC standards

Space Efficient Packaging

2 0

completion of program and erase

operations

completion of program and erase

operations

on the device

a variety of different current and future

Flash products

single-power supply Flash devices

A[19:0]

C E #

O E #

W E #

R E S E T #

B Y T E #

D Q 1 5 / A - 1

DQ[14:8]

R Y / B Y #

DQ[7:0]

HY29LV160

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