BYV72EW200 NXP Semiconductors, BYV72EW200 Datasheet
BYV72EW200
Manufacturer Part Number
BYV72EW200
Description
TO-247
Manufacturer
NXP Semiconductors
Datasheet
1.BYV72EW200.pdf
(6 pages)
Specifications of BYV72EW200
Date_code
08+
Philips Semiconductors
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EW series is supplied in
the conventional leaded SOT429
(TO247) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Neglecting switching and reverse current losses.
ESD LIMITING VALUE
October 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
V
V
I
I
I
I
I
T
T
SYMBOL PARAMETER
V
O(AV)
FRM
FSM
RRM
RSM
stg
j
RRM
RWM
R
C
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave
(both diodes conducting)
Repetitive peak forward current t = 25 s; = 0.5;
per diode
Non-repetitive peak forward
current per diode
Repetitive peak reverse current t
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
Electrostatic discharge
capacitor voltage
1
PINNING
SYMBOL
PIN
tab
1
2
3
a1
CONDITIONS
T
T
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 k
1
p
p
mb
mb
RWM(max)
= 0.5; T
= 2 s; = 0.001
= 100 s
anode 1
cathode
anode 2
cathode
144˚C
104 ˚C
DESCRIPTION
mb
k
1
2
104 ˚C
BYV72EW
a2
3
MIN.
-40
QUICK REFERENCE DATA
-
-
-
-
-
-
-
-
-
-
SOT429 (TO247)
-150
MIN.
150
150
150
V
-
R
BYV72EW series
= 150 V/ 200 V
I
I
V
O(AV)
RRM
t
MAX.
F
rr
Product specification
1
160
150
150
150
0.2
0.2
30
30
= 0.2 A
0.85 V
= 30 A
28 ns
2
MAX.
-200
3
200
200
200
8
Rev 1.200
UNIT
UNIT
kV
˚C
˚C
V
V
V
A
A
A
A
A
A
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