DSEC1612A IXYS Corporation, DSEC1612A Datasheet
DSEC1612A
Manufacturer Part Number
DSEC1612A
Description
TO-220AB
Manufacturer
IXYS Corporation
Datasheet
1.DSEC1612A.pdf
(2 pages)
Specifications of DSEC1612A
Date_code
08+
HiPerFRED
with common cathode and soft recovery
1200
Symbol
I
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 1999 IXYS All rights reserved
FRMS
FAVM
FRM
FSM
AR
R
RM
rr
V
VJ
VJM
stg
tot
F
AS
thJC
thCH
d
V
RSM
1200
V
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 s, Duty Cycle < 2.0 %
RRM
V
Test Conditions
T
t
T
T
I
V
T
mounting torque
typical
Test Conditions
T
T
I
I
V
V
T
P
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
< 10 s; rep. rating, pulse width limited by T
= 10 A;
= 1 A; -di/dt = 50 A/ s;
= 115°C; rectangular, d = 0.5
= 8 A; L = 180 µH
= 1.25·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
TM
Type
DSEC 16-12A
R
p
VJ
T
T
typ.; f = 10 kHz; repetitive
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 12 A; -di
Epitaxial Diode
= V
= V
= 150°C
= 25°C
RRM
RRM
F
/dt = 100 A/ s
typ.
VJM
0.45...0.55
0.5
40
Characteristic Values
-55...+175
-55...+150
Maximum Ratings
A
4...5
175
tbd
6.9
0.8
10
max.
14
40
60
0.25
1.96
2.94
2
2.5
8.5
60
C
lb.in.
K/W
K/W
Nm
mA
mJ
°C
°C
°C
ns
W
A
A
A
A
A
V
V
A
g
A
A
I
V
t
A = Anode, C = Cathode, TAB = Cathode
Features
Applications
Advantages
Dimensions see IXYS Catalog 2000 (CD)
TO-220 AB
FAV
rr
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
A
C
A
RM
RM
= 2x 10 A
= 1200 V
= 40 ns
-values
reduces:
DSEC 16-12A
C (TAB)
1 - 2
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