E28F008S585 Intel Corporation, E28F008S585 Datasheet

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E28F008S585

Manufacturer Part Number
E28F008S585
Description
TSOP-40
Manufacturer
Intel Corporation
Datasheet

Specifications of E28F008S585

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The Intel
and 16-Mbit FlashFile memories provide high-density, low-cost, nonvolatile, read/write storage solutions for a
wide range of applications. Their symmetrically-blocked architecture, flexible voltage, and extended cycling
provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards. Enhanced
suspend capabilities provide an ideal solution for code or data storage applications. For secure code storage
applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM,
the 4-, 8-, and 16-Mbit FlashFile memories offer three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
This family of products is manufactured on Intel
industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged
44-lead PSOP. Based on the 28F008SA architecture, the 5 Volt FlashFile memory family enables quick and
easy upgrades for designs that demand state-of-the-art technology.
NOTE: This document formerly known as Byte-Wide Smart 5 FlashFile™ Memory Family 4, 8, and 16 Mbit.
August 1999
SmartVoltage Technology
High-Performance
Enhanced Data Protection Features
Enhanced Automated Suspend Options
Industry-Standard Packaging
28F016S5 Available with Device Code
for 28F016SA
5 Volt Flash: 5 V V
12 V V
85 ns Read Access Time
Absolute Protection with V
Flexible Block Locking
Block Write Lockout during Power
Transitions
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
40-Lead TSOP, 44-Lead PSOP
®
5 Volt FlashFile™ memory renders a variety of density offerings in the same package. The 4-, 8-,
PP
5 VOLT FlashFile™ MEMORY
CC
28F004S5, 28F008S5, 28F016S5 (x8)
and 5 V or
PP
= GND
®
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m ETOX™ V process technology. They come in
High-Density 64-Kbyte Symmetrical
Erase Block Architecture
Extended Cycling Capability
Low Power Management
Automated Program and Block Erase
SRAM-Compatible Write Interface
ETOX™ V Nonvolatile Flash
Technology
4 Mbit: Eight Blocks
8 Mbit: Sixteen Blocks
16 Mbit: Thirty-Two Blocks
100,000 Block Erase Cycles
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
Command User Interface
Status Register
CC
in Static Mode
PRELIMINARY
Order Number: 290597-006
PP
at

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