74LVC1G99DP,125 NXP Semiconductors, 74LVC1G99DP,125 Datasheet

IC CONFIG MULTI-FUNC GATE 8TSSOP

74LVC1G99DP,125

Manufacturer Part Number
74LVC1G99DP,125
Description
IC CONFIG MULTI-FUNC GATE 8TSSOP
Manufacturer
NXP Semiconductors
Series
74LVCr
Datasheet

Specifications of 74LVC1G99DP,125

Logic Type
Configurable Multiple Function
Number Of Circuits
1
Number Of Inputs
4
Schmitt Trigger Input
Yes
Output Type
Single-Ended
Current - Output High, Low
32mA, 32mA
Voltage - Supply
1.65 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
74LVC1G99DP-G
74LVC1G99DP-G
935284435125
1. General description
2. Features and benefits
The 74LVC1G99 provides a low voltage, ultra-configurable, multiple function gate with
3-state output. The device can be configured as one of several logic functions including,
AND, OR, NAND, NOR, XOR, XNOR, inverter, buffer and MUX. No external components
are required to configure the device as all inputs can be connected directly to V
GND. The 3-state output is controlled by the output enable input (OE). A HIGH level at OE
causes the output (Y) to assume a high-impedance OFF-state. When OE is LOW, the
output state is determined by the signals applied to the Schmitt-trigger inputs (A, B, C and
D).
Due to the use of Schmitt-trigger inputs the device is tolerant of slowly changing input
signals, transforming them into sharply defined, jitter free output signals. By eliminating
leakage current paths to V
over-voltage tolerant, making the device suitable for mixed-voltage applications.
This device is fully specified for partial power-down applications using I
The I
the device when it is powered down.
The 74LVC1G99 is fully specified over the supply range from 1.65 V to 5.5 V.
74LVC1G99
Ultra-configurable multiple function gate; 3-state
Rev. 5 — 21 October 2010
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant inputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
ESD protection:
±24 mA output drive (V
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from −40 °C to +85 °C and −40 °C to +125 °C.
OFF
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
circuitry disables the output, preventing the damaging backflow current through
CC
CC
and GND, the inputs and disabled output are also
= 3.0 V)
Product data sheet
OFF
.
CC
or

Related parts for 74LVC1G99DP,125

74LVC1G99DP,125 Summary of contents

Page 1

Ultra-configurable multiple function gate; 3-state Rev. 5 — 21 October 2010 1. General description The 74LVC1G99 provides a low voltage, ultra-configurable, multiple function gate with 3-state output. The device can be configured as one of several logic functions including, ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range −40 °C to +125 °C 74LVC1G99DP −40 °C to +125 °C 74LVC1G99GT −40 °C to +125 °C 74LVC1G99GF −40 °C to +125 °C 74LVC1G99GD −40 °C to +125 °C 74LVC1G99GM −40 °C to +125 °C 74LVC1G99GN − ...

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... NXP Semiconductors 5. Functional diagram Fig 1. Logic symbol 6. Pinning information 6.1 Pinning 74LVC1G99 GND 4 001aah323 Fig 2. Pin configuration SOT505-2 74LVC1G99 Product data sheet Ultra-configurable multiple function gate; 3-state Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 October 2010 74LVC1G99 ...

Page 4

... NXP Semiconductors 74LVC1G99 GND 4 Transparent top view Fig 4. Pin configuration SOT996-2 6.2 Pin description Table 3. Pin description Symbol Pin SOT505-2, SOT833-1, SOT1089, SOT1116, SOT1203 and SOT996 GND 74LVC1G99 Product data sheet Ultra-configurable multiple function gate; 3-state terminal 1 index area 001aal775 Fig 5. ...

Page 5

... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level don’t care high-impedance OFF-state. 74LVC1G99 Product data sheet Ultra-configurable multiple function gate; 3-state All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 October 2010 74LVC1G99 ...

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... NXP Semiconductors 7.1 Logic configurations Table 5. Function selection table Primary function 3-state buffer 3-state inverter 3-state 2-input multiplexer 3-state 2-input multiplexer with inverting output 3-state 2-input AND 3-state 2-input AND with one inverting input 3-state 2-input AND with two inverting inputs ...

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... NXP Semiconductors 7.3 3-state inverter functions available [1] Table 7. Function table See Figure 7. Function Input OE 3-state inverter [ HIGH voltage level LOW voltage level don’t care. Fig 7. 3-state inverter function 7.4 3-state multiplexer functions available [1] Table 8. Function table See Figure 8. Function Input ...

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... NXP Semiconductors 7.5 3-state AND/NOR functions available [1] Table 9. Function table See Figure 9. Number of inputs Function AND/NAND 2 3-state AND 2 3-state AND [ HIGH voltage level LOW voltage level. OE input 1 input 2 Fig 9. 3-state AND/NOR function [1] Table 10. Function table See Figure 10. Number of inputs Function AND/NAND ...

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... NXP Semiconductors [1] Table 11. Function table See Figure 11. Number of inputs Function AND/NAND 2 3-state AND 2 3-state AND [ HIGH voltage level LOW voltage level. OE input 1 input 2 Fig 11. 3-state AND/NOR function [1] Table 12. Function table See Figure 12. Number of inputs Function AND/NAND 2 3-state AND 2 3-state AND [ HIGH voltage level; ...

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... NXP Semiconductors 7.6 3-state NAND/OR functions available [1] Table 13. Function table See Figure 13. Number of inputs Function AND/NAND 2 3-state NAND 2 3-state NAND [ HIGH voltage level LOW voltage level. OE input 1 input 2 Fig 13. 3-state NAND/OR function [1] Table 14. Function table See Figure 14. Number of inputs Function AND/NAND ...

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... NXP Semiconductors [1] Table 15. Function table See Figure 15. Number of inputs Function AND/NAND 2 3-state NAND 2 3-state NAND [ HIGH voltage level LOW voltage level. OE input 1 input 2 Fig 15. 3-state AND/NOR function [1] Table 16. Function table See Figure 16. Number of inputs Function AND/NAND 2 3-state NAND 2 3-state NAND [ HIGH voltage level; ...

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... NXP Semiconductors 7.7 3-state XOR/XNOR functions available [1] Table 17. Function table See Figure 17. Function Input OE 3-state XOR [ HIGH voltage level LOW voltage level. Fig 17. 3-state XOR function [1] Table 18. Function table See Figure 18. Function Input OE 3-state XOR L [ HIGH voltage level LOW voltage level. ...

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... NXP Semiconductors [1] Table 19. Function table See Figure 19. Function Input OE 3-state XOR L [ HIGH voltage level LOW voltage level. Fig 19. 3-state XOR function [1] Table 20. Function table See Figure 20. Function Input OE 3-state XNOR HIGH voltage level LOW voltage level. Fig 20. 3-state XNOR function ...

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... NXP Semiconductors 8. Limiting values Table 21. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage O I output current ...

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... NXP Semiconductors 10. Static characteristics Table 23. Static characteristics At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter = −40 °C to +85 °C T amb V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current ...

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... NXP Semiconductors Table 23. Static characteristics At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter I input leakage current I I OFF-state output current OZ I power-off leakage current OFF I supply current CC ΔI additional supply current CC [1] All typical values are measured at V 11. Dynamic characteristics Table 24 ...

Page 17

... NXP Semiconductors Table 24. Dynamic characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Symbol Parameter Conditions t enable time see disable time see dis power dissipation per buffer (output enabled); PD capacitance MHz [1] All typical values are measured at nominal V [ the same as t and t ...

Page 18

... NXP Semiconductors 12. Waveforms input Measurement points are given in Logic levels: V and Fig 21. The data input ( output (Y) propagation delays OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in Logic levels: V and Fig 22. 3-state enable and disable times Table 25. Measurement points ...

Page 19

... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 23. Test circuit for measuring switching times Table 26. ...

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... NXP Semiconductors Table 27. Transfer characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Symbol Parameter Conditions V negative-going see T− threshold voltage Figure Figure hysteresis voltage ( Figure Figure [1] All typical values are measured at T 14. Waveforms transfer characteristics T− Fig 24. Transfer characteristic ...

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... NXP Semiconductors T− Fig 26. Transfer characteristic Fig 28. Typical 74LVC1G99 transfer characteristic; V 74LVC1G99 Product data sheet Ultra-configurable multiple function gate; 3-state mnb154 Fig 27. Definition (mA 3 All information provided in this document is subject to legal disclaimers. Rev. 5 — 21 October 2010 74LVC1G99 T− and V T+ T− ...

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... NXP Semiconductors 15. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0.95 mm 1.1 0.25 0.00 0.75 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...

Page 23

... NXP Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. 8× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 2.0 mm 0.5 0.04 0.17 1.9 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

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... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1. 0.5 mm terminal 1 index area (2) (4× terminal 1 index area Dimensions (1) Unit max 0.5 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 25

... NXP Semiconductors XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 0.5 mm terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.35 2.1 mm 0.5 0.00 0.15 1.9 OUTLINE VERSION IEC SOT996 Fig 32. Package outline SOT996-2 (XSON8U) ...

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... NXP Semiconductors XQFN8U: plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm terminal 1 index area metal area not for soldering 2 1 terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.25 1.65 mm 0.5 0.00 ...

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... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.2 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.25 mm nom 0.15 1.20 min 0.12 1.15 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

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... NXP Semiconductors XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.35 x 1 (2) (8×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.40 mm nom 0.15 1.35 min 0.12 1.30 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 29

... NXP Semiconductors 16. Abbreviations Table 28. Abbreviations Acronym Description CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 17. Revision history Table 29. Revision history Document ID Release date 74LVC1G99 v.5 20101021 • Modifications: Added type number 74LVC1G99GN (SOT1116/XSON8 package). ...

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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 31

... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 19. Contact information For more information, please visit: For sales office addresses, please send an email to: 74LVC1G99 Product data sheet Ultra-configurable multiple function gate ...

Page 32

... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Functional description . . . . . . . . . . . . . . . . . . . 5 7.1 Logic configurations . . . . . . . . . . . . . . . . . . . . . 6 7.2 3-state buffer functions available . . . . . . . . . . . 6 7.3 3-state inverter functions available . . . . . . . . . . 7 7 ...

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