IXFN230N10_08 IXYS [IXYS Corporation], IXFN230N10_08 Datasheet
IXFN230N10_08
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IXFN230N10_08 Summary of contents
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Power MOSFET Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R DGR J V Continuous GSS V Transient GSM ...
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Symbol Test Conditions (T = 25°C, unless otherwise specified 10V 60A, Note iss 0V 25V 1MHz oss rss t ...
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Fig. 1. Output Characteristics @ 25ºC 240 V = 10V 200 7V 160 120 0.0 0.2 0.4 0 Volts DS Fig. 3. Output Characteristics @ 125ºC 240 V = 10V GS 9V ...
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Fig. 7. Input Admittance 200 180 160 140 120 100 T = 125º 25ºC - 40º 2.5 3.0 3.5 4 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 270 ...
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Fig. 13. Forward-Bias Safe Operating Area @ T = 25ºC C 1,000 R Limit DS(on) 100 External-Lead Limit 150º 25ºC C Single Pulse Volts DS © 2008 IXYS Corporation, ...