IXFN38N100Q2_08 IXYS [IXYS Corporation], IXFN38N100Q2_08 Datasheet
IXFN38N100Q2_08
Manufacturer Part Number
IXFN38N100Q2_08
Description
HiPerFET Power MOSFET
Manufacturer
IXYS [IXYS Corporation]
Datasheet
1.IXFN38N100Q2_08.pdf
(4 pages)
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
I
I
R
D25
DM
AR
DSS
© 2008 IXYS All rights reserved
GSS
J
JM
stg
DGR
GSM
AR
AS
D
DSS
GSS
ISOL
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Test Conditions
V
V
S
V
V
V
V
C
C
C
C
C
C
J
J
GS
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 25°C
= 10V, I
= ±30V, V
= V
= 0V
= 0V, I
= V
DM
DSS
, V
GS
rr
TM
, I
DD
D
D
D
= 1mA
= 8mA
= 0.5 • I
≤ V
DS
DSS
= 0V
g
, Low Intrinsic R
, T
D25
GS
J
, Note 1
≤ 150°C
= 1 MΩ
(T
T
J
J
= 25°C, unless otherwise specified)
= 125°C
IXFN38N100Q2
JM
g
1000
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.5/11.5 Nm/lb.in.
Typ.
1.5/13 Nm/lb.in.
1000
1000
2500
152
150
±30
±40
890
38
38
60
30
20
5
Max.
±200
250 mΩ
5.5
50
3 mA
V/ns
mJ
°C
°C
°C
μA
nA
W
V
V
V
V
A
A
A
V
g
V
V
J
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
D25
rr
Double metal process for low
miniBLOC, with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
gate resistance
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generators
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
≤ ≤ ≤ ≤ ≤ 300ns
≤ ≤ ≤ ≤ ≤ 250mΩ Ω Ω Ω Ω
= 38A
= 1000V
G
D = Drain
S
DS99027B(05/08)
D
S
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IXFN38N100Q2_08 Summary of contents
Page 1
HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g High dV/dt, Low t rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R DGR ...
Page 2
Symbol Test Conditions 20V 0.5 • D25 C iss 25V 1MHz oss rss t Resistive Switching Time d(on) t ...
Page 3
Fig. 1. Output Characteristics @ 25º Volts DS Fig. 3. Output Characteristics @ 125ºC 40 ...
Page 4
Fig. 7. Input Admittance º º º 3.0 3.5 4.0 4 Volts ...