M36P0R9070E0_06 STMICROELECTRONICS [STMicroelectronics], M36P0R9070E0_06 Datasheet - Page 14

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M36P0R9070E0_06

Manufacturer Part Number
M36P0R9070E0_06
Description
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Functional description
3
14/23
Functional description
The PSRAM and Flash memory components have separate power supplies but share the
same grounds. They are distinguished by two Chip Enable inputs: E
the PSRAM.
Recommended operating conditions do not allow more than one device to be active at a
time. The most common example is a simultaneous read operations on the Flash memory
and the PSRAM which would result in a data bus contention. Therefore it is recommended
to put the other devices in the high impedance state when reading the selected device.
Figure 3.
A0-A22
A23-A24
Functional block diagram
L
K
WP
E
G
W
RP
F
E
G
W
CR
UB
LB
F
F
P
F
P
F
P
P
P
P
V
V
DDF
CCP
512 Mbit
Memory
128Mbit
PSRAM
Flash
V
PPF
V
SS
DPD
V
DDQ
F
F
WAIT
for Flash and E
M36P0R9070E0
DQ0-DQ15
Ai11731
P
for

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