STPS41H100C_12 STMICROELECTRONICS [STMicroelectronics], STPS41H100C_12 Datasheet - Page 2

• Manufacturer Part Number: STPS41H100C_12
• Description: Low drop power Schottky rectifier
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Characteristics
1
2/9
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
Table 4.
1. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.58 x I
Symbol
Symbol
Symbol
Tj(diode 1) = P(diode1) x R
I
R
V
F(RMS)
P
dV/dt
R
I
I
V
I
F(AV)
I
T
RRM
FSM
th(j-c)
R
RRM
ARM
th(c)
F
T
dPtot
stg
dTj
(1)
(1)
j
<
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Junction to case
Coupling
Reverse leakage
current
Forward voltage drop
Rth(j-a)
F(AV)
1
p
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
= 380 µs,
Parameter
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.0045 I
< 2%
F
2
th(j-c)
(RMS)
Doc ID 8613 Rev 5
T
T
T
T
T
T
j
j
j
j
j
j
(Per diode) + P(diode 2) x R
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Parameter
Parameter
Test conditions
V
I
I
I
I
T
t
t
t
F
F
F
F
p
p
p
R
c
= 0.5
= 20 A
= 20 A
= 40 A
= 40 A
= 10 ms sinusoidal
= 2 µs square F= 1 kHz
= 1 µs T
= 50 °C
(1)
= V
RRM
j
= 25 °C
Per diode
Per device
Per diode
Total
Min.
th(c)
Typ.
0.62
0.70
3
-65 to + 175
10000
18100
Value
Value
100
220
175
1.5
0.8
0.1
30
20
40
1
STPS41H100C
Max.
0.80
0.67
0.90
0.76
10
10
°C/W
V/µs
Unit
Unit
Unit
mA
°C
°C
W
V
A
A
A
A
V
A