M36L0R7040B0 STMICROELECTRONICS [STMicroelectronics], M36L0R7040B0 Datasheet - Page 14

• Manufacturer Part Number: M36L0R7040B0
• Description: 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M36L0R7040T0, M36L0R7040B0
Table 7. Flash Memory DC Characteristics - Voltages
Table 8. PSRAM DC Characteristics
Note: 1. Average AC current, cycling at t
14/18
Symbol
Symbol
V
V
V
V
V
V
V
V
I
I
V
V
V
V
V
PPLK
I
CC1
CC2
I
I
IH
IL
PPH
RPH
PP1
LKO
I
LO
PD
SB
OH
OH
OL
LI
OL
IH
IL
2. E1
3. E1
4. Output disabled.
(2)
(1)
P
P
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Program or Erase Lockout
V
RP
V
Input Leakage Current
Output Leakage Current
Deep Power Down Current
Standby Supply Current
CMOS
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
= V
V
PPF
DDF
CC
0.2V or E2
PPF
F
IL
, E2
pin Extended High Voltage
Active Current
Program Voltage-Logic
Lock Voltage
Program Voltage Factory
P
Parameter
= V
Parameter
P
IH
, UB
V
DDQ
P
OR/AND LB
–0.2V, UB
AVAV
minimum.
P
P
OR/AND LB
E1
= V
P
IL
V
= V
E1
V
, V
V
IN
IN
I
DDP
OUT
IN
P
IL
E1
= V
Test Condition
Program, Erase
Program, Erase
= V
I
P
and E2
OH
I
P
V
OL
= 1.95V,
V
= 0mA
IH
0V V
DDP
= E2
0V
IH
DDP
Test Condition
0.2V, V
= –100µA
V
V
= 100µA
or V
I
OR V
OH
I
DDP
DDP
OUT
I
OL
– 0.2V or V
– 0.2V or E1
P
P
V
= –0.5mA
OUT
IL
= V
IN
IN
= 1mA
IL
= 1.95V,
= 1.95V,
,
= 0mA
.
V
DDP
IH
0.2V or V
V
,
V
DDP
DDP
– 0.2V,
IN
t
t
t
t
AVAV
AVAV
P
AVAV
AVAV
maximum
minimum
IN
0.2V
V
V
V
DDQ
DDQ
Write =
Write =
Read /
Read /
IL
V
–0.5
Min
1.1
8.5
,
DDQ
1
–0.4
–0.1
–0.2V.
V
0.8V
DDP
Typ
–0.3
1.8
9.0
Min
–1
–1
DDP
– 0.2
V
DDQ
V
DDP
Max
12.6
0.4
0.1
3.3
0.4
3.3
Max
110
0.4
0.2
20
10
+ 0.4
3
1
1
+ 0.2
Unit
Unit
mA
mA
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
V
V
V
V