M36L0R7050B0ZAQE STMICROELECTRONICS [STMicroelectronics], M36L0R7050B0ZAQE Datasheet

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M36L0R7050B0ZAQE

Manufacturer Part Number
M36L0R7050B0ZAQE
Description
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
FEATURES SUMMARY
FLASH MEMORY
December 2004
MULTI-CHIP PACKAGE
SUPPLY VOLTAGE
ELECTRONIC SIGNATURE
PACKAGE
SYNCHRONOUS / ASYNCHRONOUS READ
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
MEMORY ORGANIZATION
DUAL OPERATIONS
SECURITY
32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
1 die of 128 Mbit (8Mb x16, Multiple Bank,
Multi-level, Burst) Flash Memory
1 die of 32 Mbit (2Mb x16) Asynchronous
Pseudo SRAM
V
V
Manufacturer Code: 20h
Device Code (Top Flash Configuration)
M36L0R7050T0: 88C4h
Device Code (Bottom Flash
Configuration) M36L0R7050B0: 88C5h
Compliant with Lead-Free Soldering
Processes
Lead-Free Versions
Synchronous Burst Read mode: 54MHz
Asynchronous Page Read mode
Random Access: 85ns
10µs typical Word program time using
Buffer Program
Multiple Bank Memory Array: 8 Mbit
Banks
Parameter Blocks (Top or Bottom
location)
program/erase in one Bank while read in
others
No delay between read and write
operations
64 bit unique device number
2112 bit user programmable OTP Cells
DDF
PPF
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
= 9V for fast program (12V tolerant)
= V
DDP
= V
DDQ
= 1.7 to 1.95V
Figure 1. Package
PSRAM
BLOCK LOCKING
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ACCESS TIME: 85ns
LOW STANDBY CURRENT: 100µA
DEEP POWER-DOWN CURRENT: 10µA
BYTE CONTROL: UB
PROGRAMMABLE PARTIAL ARRAY
8 WORD PAGE ACCESS CAPABILITY: 25ns
PARTIAL POWER-DOWN MODES
All blocks locked at power-up
Any combination of blocks can be locked
with zero latency
WP
Absolute Write Protection with V
Deep Power-Down
4 Mbit Partial Power-Down
8 Mbit Partial Power-Down
16 Mbit Partial Power-Down
F
for Block Lock-Down
M36L0R7050B0
M36L0R7050T0
TFBGA88 (ZAQ)
8 x 10mm
FBGA
P
/LB
P
PPF
= V
1/18
SS

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M36L0R7050B0ZAQE Summary of contents

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Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 ...

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M36L0R7050T0, M36L0R7050B0 TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Table 4. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M36L0R7050T0, M36L0R7050B0 SUMMARY DESCRIPTION The M36L0R7050T0 and M36L0R7050B0 com- bine two memory devices in a Multi-Chip Package: a 128-Mbit, Multiple Bank Flash memory, the M30L0R7000T0 or M30L0R7000B0, and a 32- Mbit PseudoSRAM, the M69AR048B. Recom- mended operating conditions do not ...

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Figure 3. TFBGA Connections (Top view through package ...

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M36L0R7050T0, M36L0R7050B0 SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram Names, for a brief overview of the signals connect this device. Address Inputs (A0-A22). Addresses are common inputs for the Flash Memory and the PSRAM components. The other lines ...

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It is not allowed to set IL the same time. IH PSRAM Output Enable (G ). The Output En- P able provides a high speed tri-state control, P allowing fast read/write ...

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M36L0R7050T0, M36L0R7050B0 FUNCTIONAL DESCRIPTION The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by three Chip En- able inputs: E for the Flash memory and for the PSRAM. ...

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Table 2. Main Operating Modes Operation Flash Read Flash Write Flash Address Latch Flash Output V V ...

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M36L0R7050T0, M36L0R7050B0 FLASH MEMORY DEVICE The M36L0R7050T0 and M36L0R7050B0 contain a 128 Mbit Flash memory. For detailed information on how to use the devices, PSRAM DEVICE The M36L0R7050T0 and M36L0R7050B0 contain a 32 Mbit PSRAM. This device can be placed ...

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MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above ...

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M36L0R7050T0, M36L0R7050B0 DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed ...

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Table 7. Flash Memory DC Characteristics - Currents Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO Supply Current Asynchronous Read (f=6MHz) Supply Current Synchronous Read (f=40MHz) I DD1 Supply Current Synchronous Read (f=54MHz) Supply Current I ...

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M36L0R7050T0, M36L0R7050B0 Table 8. Flash Memory DC Characteristics - Voltages Symbol Parameter V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage Program Voltage-Logic PP1 PPF V V ...

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PACKAGE MECHANICAL Figure 7. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Bottom View Outline BALL "A1" FE Note: Drawing is not to scale. Table 10. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm ...

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M36L0R7050T0, M36L0R7050B0 PART NUMBERING Table 11. Ordering Information Scheme Example: Device Type M36 = Multi-Chip Package (Multiple Flash + RAM) Flash 1 Architecture L = Multilevel, Multiple Bank, Burst mode Flash 2 Architecture Die Operating Voltage R ...

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REVISION HISTORY Table 12. Document Revision History Date Version 29-Jul-2003 0.1 First Issue Package specifications updated. PSRAM component updated in accordance with M69AR048B datasheet. Flash memory component updated in accordance with 03-Jun-2004 0.2 M30L0R7000(T/B)0 datasheet. Document status changed from Target ...

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M36L0R7050T0, M36L0R7050B0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from ...

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