K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 28

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K9F1G08D0M

Manufacturer Part Number
K9F1G08D0M
Description
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
BLOCK ERASE OPERATION
CLE
CE
WE
ALE
RE
R/B
I/Ox
Auto Block Erase
Setup Command
t
60h
WC
K9F1G16Q0M
K9F1G16D0M
Row Add1
Row Address
Row Add2
Erase Command
D0h
t
WB
Busy
28
t
BERS
Read Status
Command
70h
FLASH MEMORY
I/O
I/O
0
0
=1 Error in Erase
=0 Successful Erase
I/O 0

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