K9F1G08D0M SAMSUNG [Samsung semiconductor], K9F1G08D0M Datasheet - Page 8

• Manufacturer Part Number: K9F1G08D0M
• Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Figure 1-2. K9F1G16X0M (X16) Functional Block Diagram
Figure 2-2. K9F1G16X0M (X16) Array Organization
V
V
(=1,024 Blocks)
64K Pages
NOTE : Column Address : Starting Address of the Register.
CC
SS
2nd Cycle
3rd Cycle
1st Cycle
4th Cycle
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
CE
RE
WE
Command
A
A
11
0
I/O 0
A
A
- A
A
A
- A
K9F1G16Q0M
K9F1G16D0M
11
19
0
8
10
26
I/O 1
CLE
A
A
A
A
12
20
1
9
& High Voltage
1K Words
Page Register
Control Logic
1K Words
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Command
Generator
Register
ALE PRE
I/O 2
A
A
A
A
10
13
21
2
WP
I/O 3
A
A
A
*L
14
22
3
32 Words
32 Words
I/O 4
A
A
A
*L
15
23
4
8
I/O 0 ~ I/O 15
I/O 5
A
A
A
*L
16
24
5
Global Buffers
(512 + 64)Word x 65536
Data Register & S/A
I/O Buffers & Latches
1024M + 32M Bit
Cache Register
NAND Flash
I/O 6
16 bit
A
A
A
*L
Y-Gating
17
25
ARRAY
6
1 Block = 64 Pages
(64K + 2k) Word
1 Page = (1K + 32)Words
1 Block = (1K + 32)Word x 64 Pages
1 Device = (1K+32)Word x 64Pages x 1024 Blocks
I/O 7
A
A
A
*L
18
26
7
= (64K + 2K) Words
= 1056 Mbits
I/O8 ~ 15
FLASH MEMORY
Output
Driver
*L
*L
*L
*L
Row Address
Row Address
Column Address
Column Address
V
V
CC
SS
I/0 15
I/0 0