WS57C256F-35C STMICROELECTRONICS [STMicroelectronics], WS57C256F-35C Datasheet - Page 3

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WS57C256F-35C

Manufacturer Part Number
WS57C256F-35C
Description
HIGH SPEED 32K x 8 CMOS EPROM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
NOTES: 5. This parameter is only sampled and is not 100% tested.
TEST LOAD
AC READ TIMING DIAGRAM
CAPACITANCE
NOTE: 7. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
2.01 V
D.U.T.
SYMBOL
C
C
C
IN
OUT
VPP
6. Typical values are for T
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between V
Inadequate decoupling may result in access time degradation or other transient performance failures.
(High Impedance Test Systems)
98
(5)
Input Capacitance
Output Capacitance
V
PP
ADDRESSES
T
PARAMETER
OUTPUTS
A
Capacitance
= 25°C, f = 1 MHz
A
CE
OE
= 25°C and nominal supply voltages.
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
CONDITIONS
t
ACC
V
V
V
OUT
PP
IN
VALID
t
CE
= 0V
= 0 V
= 0V
t
OE
A.C. TESTING INPUT/OUTPUT WAVEFORM
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V
for a logic "0." Timing measurements are made at 2.0 V for a
logic "1" and 0.8 V for a logic "0".
0.0
3.0
VALID
TYP
t
t
OH
DF
18
4
8
0.8
2.0
(6)
t
DF
CC
POINTS
TEST
and ground is recommended.
MAX
12
25
6
0.8
2.0
WS57C256F
UNITS
pF
pF
pF
3-15

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