ISL6612 INTERSIL [Intersil Corporation], ISL6612 Datasheet

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ISL6612

Manufacturer Part Number
ISL6612
Description
Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

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Advanced Synchronous Rectified Buck
MOSFET Drivers with Protection Features
The ISL6612 and ISL6613 are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612 drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6613 drives both upper and lower gates over a
range of 5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an over-voltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during startup. The over-
temperature protection feature prevents failures resulting
from excessive power dissipation by shutting off the outputs
when its junction temperature exceeds 150°C (typically). The
driver resets once its junction temperature returns to 108°C
(typically).
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
®
1
Data Sheet
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Pin-to-pin Compatible with HIP6601 SOIC family for Better
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
• Pre-POR Over-Voltage Protection
• VCC Undervoltage Protection
• Over Temperature Protection (OTP) with 42°C Hysteresis
• Expandable Bottom Copper Pad for Enhanced Heat
• Dual Flat No-Lead (DFN) Package
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC-DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
• Technical Briefs TB400 and TB417 for Power Train
Performance and Extra Protection Features
- Body Diode Detection
- Auto-zero of r
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Power Sequencing Requirement
Sinking
- Near Chip-Scale Package Footprint; Improves PCB
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Design, Layout Guidelines, and Feedback Compensation
Design
Efficiency and Thinner in Profile
All other trademarks mentioned are the property of their respective owners.
July 25, 2005
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
DS(ON)
Copyright Intersil Americas Inc. 2005. All Rights Reserved
ISL6612, ISL6613
Conduction Offset Effect
FN9153.5

Related parts for ISL6612

ISL6612 Summary of contents

Page 1

... ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612 drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613 drives both upper and lower gates over a range 12V ...

Page 2

... Ld EPSOIC (Pb-Free) - EPSOIC - EPSOIC (Pb-Free) - SOIC - SOIC (Pb-Free) - 3x3 DFN - 3x3 DFN (Pb-Free) ISL6612CR, ISL6613CR (10L 3x3 DFN) TOP VIEW 1 10 UGATE PHASE BOOT 2 9 PVCC GND 3 8 N/C ...

Page 3

... THROUGH PROTECTION POR/ CONTROL LOGIC FOR DFN AND EPSOIC-DEVICES, THE PAD ON THE BOTTOM SIDE OF PAD THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. BOOT UGATE PHASE (LVCC) PVCC UVCC = VCC FOR ISL6612 UVCC = PVCC FOR ISL6613 LGATE GND FN9153.5 July 25, 2005 ...

Page 4

... Typical Application - 3 Channel Converter Using ISL65xx and ISL6612 Gate Drivers +5V VCC VFB COMP PWM1 VSEN PWM2 PGOOD PWM3 MAIN CONTROL ISL65xx VID ISEN1 ISEN2 FS ISEN3 GND 4 ISL6612, ISL6613 +12V +5V TO 12V VCC BOOT UGATE PVCC PHASE ISL6612 PWM LGATE GND +12V ...

Page 5

... ISL6613 300kHz, V PWM I ISL6612 1MHz, V VCC PWM ISL6613 1MHz, V PWM I ISL6612 300kHz, V PVCC PWM ISL6613 300kHz, V PWM I ISL6612 1MHz, V PVCC PWM ISL6613 1MHz, V PWM T = 0°C to 85° -40°C to 85° 0°C to 85° -40°C to 85° ...

Page 6

... Connect this pin to a +12V bias supply. Place a high quality low ESR ceramic capacitor from this pin to GND PVCC This pin supplies power to both upper and lower gate drives in ISL6613; only the lower gate drive in ISL6612. Its operating range is +5V to 12V. Place a high quality low ESR ceramic capacitor from this pin to GND PHASE Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET ...

Page 7

... FL t PDLL Operation Designed for versatility and speed, the ISL6612 and ISL6613 MOSFET drivers control both high-side and low-side N-Channel FETs of a half-bridge power train from one externally provided PWM signal. Prior to VCC exceeding its POR level, the Pre-POR over- voltage protection function is activated; the upper gate ...

Page 8

... The ISL6612 and ISL6613 provide the user flexibility in choosing the gate drive voltage for efficiency optimization. The ISL6612 upper gate drive is fixed to VCC [+12V], but the lower drive rail can range from 12V down to 5V depending on what voltage is applied to PVCC. The ISL6613 ties the upper and lower drive rails together ...

Page 9

... and MOSFETs. Figures 3 and 4 show the GI1 GI2 typical upper and lower gate drives turn-on transition path. The power dissipation on the driver can be roughly estimated as: 9 ISL6612, ISL6613 DR_UP P DR_LOW R EXT1 UVCC (EQ FIGURE 3 ...

Page 10

... D2 (DATUM B) D2 INDEX AREA (DATUM N (Nd-1)Xe REF. BOTTOM VIEW 0.415 NX (b) (A1) 5 SECTION "C-C" 10 ISL6612, ISL6613 2X L10.3x3 0. LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE 2X 0. SYMBOL 0. 0. NOTES: 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. ...

Page 11

... SEATING PLANE - -C- α 0.10(0.004) 0.25(0.010 SIDE VIEW BOTTOM VIEW 11 ISL6612, ISL6613 M8.15B 8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD PLASTIC PACKAGE SYMBOL MIN A 0.056 A1 0.001 B 0.0138 C 0.0075 L D 0.189 E 0.150 ...

Page 12

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12 ISL6612, ISL6613 M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE ...

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