HYB5116405BJBT-50- SIEMENS [Siemens Semiconductor Group], HYB5116405BJBT-50- Datasheet - Page 6

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HYB5116405BJBT-50-

Manufacturer Part Number
HYB5116405BJBT-50-
Description
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics( note : values in brackets for HYB 5117405 BJ/BT)
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current
(0 V
Output leakage current
(DO is disabled, 0 V
Average
(RAS, CAS, address cycling: t
Standby
Average
refresh cycles:
(RAS cycling, CAS =
Semiconductor Group
A
= 0 to 70 °C,
V
IH
V
V
V
CC
CC
CC
Vcc + 0.3V, all other pins = 0 V)
supply current (RAS = CAS =
supply current:
supply current, during RAS-only
V
SS
= 0 V,
I
I
OUT
V
OUT
V
IH
OUT
, t
= 4.2 mA)
= – 5 mA)
RC
V
CC
-50 ns version
-60 ns version
-70 ns version
-50 ns version
-60 ns version
-70 ns version
= t
Vcc + 0.3V)
RC
= 5 V
RC
= t
min.)
RC
min.)
10 %; t
V
IH
T
)
= 2 ns
6
Symbol
V
V
V
V
I
I
I
I
I
I(L)
O(L)
CC1
CC2
CC3
IH
IL
OH
OL
HYB5116(7)405BJ/BT-50/-60/-70
min.
2.4
– 0.5
2.4
– 10
– 10
Limit Values
max.
Vcc+0.5
0.8
0.4
10
10
100(120)
90 (110)
80 (100)
2
100(120)
90 (110)
80 (100)
4M x 4-EDO DRAM
Unit Test
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
A
A
Condition
1)
1)
1)
1)
1)
1)
2) 3) 4)
2) 3) 4)
2) 3) 4)
2) 4)
2) 4)
2) 4)

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