HCTS20D/SAMPLE INTERSIL [Intersil Corporation], HCTS20D/SAMPLE Datasheet
HCTS20D/SAMPLE
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HCTS20D/SAMPLE Summary of contents
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TM September 1995 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm • Single Event Upset (SEU) Immunity < (Typ) • Dose Rate Survivability: ...
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Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...
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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Output TPHL VCC = 4.5V TPLH VCC = 4.5V NOTES: 1. All voltages referenced to device GND measurements assume RL = 500Ω 50pF, Input TR = ...
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TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B ...
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TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONNECTIONS (Note 10, 12, 13 STATIC BURN-IN II TEST CONNECTIONS (Note ...
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Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...
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AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 All Intersil U.S. products are manufactured, assembled ...
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Die Characteristics DIE DIMENSIONS: 2.20 x 2.24(mm) METALLIZATION: Type: SiAl ± 1k Å Å Metal Thickness: 11k GLASSIVATION: Type: SiO 2 ± 2.6k Å Å Thickness: 13k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: ...