HCTS20D/SAMPLE INTERSIL [Intersil Corporation], HCTS20D/SAMPLE Datasheet - Page 2
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HCTS20D/SAMPLE
Manufacturer Part Number
HCTS20D/SAMPLE
Description
Radiation Hardened Dual 4-Input NAND Gate
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HCTS20DSAMPLE.pdf
(8 pages)
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . ±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (T
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Quiescent Current
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Noise Immunity
Functional Test
PARAMETER
SYMBOL
VOH
VOL
IOH
ICC
IOL
IIN
FN
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
) . . . . . . . . . . . . -55
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V (Note 2)
CONDITIONS
(NOTE 1)
Specifications HCTS20MS
o
o
C to +150
C to +125
o
o
o
o
C
C
C
C
421
GROUPS
7, 8A, 8B
GROUP
A SUB-
Reliability Information
Thermal Resistance
Maximum Package Power Dissipation at +125
If device power exceeds package dissipation capability, provide
heat sinking or derate linearly at the following rate:
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
2, 3
2, 3
2, 3
2, 3
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
1
1
1
1
+25
+25
+25
+25
+25
TEMPERATURE
+125
+125
+125
o
o
o
o
+125
o
C, +125
C, +125
C, +125
C, +125
C, +125
+25
+25
+25
+25
o
o
o
o
C, -55
C, -55
C, -55
C, -55
o
o
o
o
o
o
o
o
o
C
C
C
C
C, -55
C, -55
C, -55
C, -55
C, -55
o
o
o
o
C
C
C
C
o
o
o
o
o
C
C
C
C
C
VCC
VCC
MIN
-4.8
-4.0
-0.1
-0.1
4.8
4.0
-
-
-
-
-
-
-
Spec Number
LIMITS
116
o
74
C Ambient
θ
o
o
MAX
JA
C/W
±0.5
±5.0
200
C/W
0.1
0.1
10
-
-
-
-
-
-
-
24
30
UNITS
518619
θ
mA
mA
mA
mA
o
o
µA
µA
µA
µA
V
V
V
V
JC
C/W
C/W
-
o
o
C
C