SE1050W SIGE [SiGe Semiconductor, Inc.], SE1050W Datasheet
SE1050W
Related parts for SE1050W
SE1050W Summary of contents
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... SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb 12.5 Gb/s. SiGe Semiconductor’s SE1050W is a fully integrated silicon bipolar transimpedance amplifier, providing wideband, low noise preamplication of signal current from a PIN photodetector. outputs. A decoupling capacitor on the supply is the only external component required ...
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... Bond option: Connected to external capacitor to ground for single-ended operation 13 ACGND (recommended 1 nF); unconnected for differential operation. 45-DST-01 § Rev 1.5 § May 24/02 ™ LightCharger 10 Gb/s Transimpedance Amplifier GND ACGND 1 13 Top View GND VCC1 VCC1 VCC2 Description SE1050W Final 12 OUTP OUTN 11 10 VCC2 ...
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... The use of external decoupling will help to remove any unwanted signals at higher frequencies. Laser Driver SE1150/51/52 Receiver Module SE1250 Post 2 2 SE1050W Amplifier TZ Amplifier LOS SE1050W Final output, on the pins OUTP and (recommend 1 nF). Under these PIN ...
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... Output Resistance 45-DST-01 § Rev 1.5 § May 24/02 ™ LightCharger 10 Gb/s Transimpedance Amplifier Min –0.7 –0.5 –20 –5 –2 –0.25 –65 Min Typ 4.7 5.0 –40 Min Typ 86 1.28 1.29 3 SE1050W Final Max Unit 6.0 V VCC+0 0.25 kV 150 C Max Unit 5.3 V 100 C Max Unit 130 mA 1 ...
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... Transimpedance (Tz) measured with 0 > lin < 580 A pk-pk, at 100 MHz 45-DST-01 § Rev 1.5 § May 24/02 ™ LightCharger 10 Gb/s Transimpedance Amplifier Min Typ 8 9.8 on each output, 0.75 1 290 460 17 2300 +1.1 1.4 AC coupled via 100 nF, for each output max SE1050W Final Max Unit 13 GHz 1.8 k 10.7 Gb/s 1.1 V pk-pk 47 kHz mean dB A pk-pk dBm 2.0 A rms ...
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... Gb/s Transimpedance Amplifier X Y Name Coordinate Coordinate (µm) (µm) GND 234.9 658.0 GND 121.7 658.0 TZ_IN 0 510.3 GND 0 0 GND 116.5 0 GND 233.5 0 VCC1 365.2 0 VCC1 480.2 0 VCC2 693.0 0 VCC2 808.0 0 OUTN 808.0 418.9 OUTP 808.0 537.3 ACGND 619.9 658.0 SE1050W Final ...
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... The diagram below shows the bondpad configuration of the SE1050W Transimpedance Amplifier. Note that the diagram is not to scale. All bondpads are 92 µ µm with a passivation opening of 82 µ µm. All VCC and GND pads must be bonded to minimize inductive effects. Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B. ...
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... VCC2 TZ Amplifier OUTP SE1050W TZ_IN OUTN GND ACGND VCC1 VCC2 TZ Amplifier OUTP SE1050W OUTN GND ACGND SE1050W 1 nF min loads, AC coupled min load, AC coupled min Final ...
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... Bandwidth, Input Referred Noise and Gain Peak, is shown in the graphs below. Bondwire diameter ( Cpin = 0 Cpin = 0. 0.5 45-DST-01 § Rev 1.5 § May 24/02 ™ LightCharger 10 Gb/s Transimpedance Amplifier The effect of input bondwire inductance on Inductance per mm (nH) 25 0.81 30 0.77 32 0.76 Bandwidth vs Input Bondwire Inductance Differential Mode of Operation 1.1 0.7 0.9 Input Inductance (nH) SE1050W Final 1.3 1 ...
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... Rev 1.5 § May 24/02 ™ LightCharger 10 Gb/s Transimpedance Amplifier Input Referred Noise vs Input Bondwire Inductance Differential Mode of Operation Cpin = 0.2 pF Cpin = 0.25 pF 1.1 0.7 0.9 Input Inductance (nH) Gain Peak vs Input Bondwire Inductance Differential Mode of Operation 1.1 0.7 0.9 Input Inductance (nH) SE1050W Final 1.3 1.5 Cpin = 0.25 pF Cpin = 0.2 pF 1.3 1 ...
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... Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada sales@sige.com United Kingdom 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +44 1223 598 444 Fax: SE1050W Final +44 1223 598 035 ...