SE1050W SIGE [SiGe Semiconductor, Inc.], SE1050W Datasheet - Page 9
SE1050W
Manufacturer Part Number
SE1050W
Description
Manufacturer
SIGE [SiGe Semiconductor, Inc.]
Datasheet
1.SE1050W.pdf
(11 pages)
As a guide to the effect of bondwire length on inductance, the table below gives some examples of observed
inductance per millimeter for popular gold bondwire diameters.
Bandwidth, Input Referred Noise and Gain Peak, is shown in the graphs below.
45-DST-01 § Rev 1.5 § May 24/02
11
10
8
9
7
0.5
Bondwire diameter ( m)
Cpin = 0.2 pF
Cpin = 0.25 pF
0.7
25
30
32
Bandwidth vs Input Bondwire Inductance
Differential Mode of Operation
Input Inductance (nH)
LightCharger
0.9
Inductance per mm (nH)
1.1
™
The effect of input bondwire inductance on
0.81
0.77
0.76
10 Gb/s Transimpedance Amplifier
1.3
1.5
SE1050W
9 of 11
Final